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Other articles related with "Flash memory"：
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98501 |
Jin-Shun Bi(毕津顺), Kai Xi(习凯), Bo Li(李博), Hai-Bin Wang(王海滨), Lan-Long Ji(季兰龙), Jin Li(李金), Ming Liu(刘明) |
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Heavy ion induced upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory |
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Chin. Phys. B
2018 Vol.27 (9): 98501-098501
[Abstract]
(645)
[HTML 1 KB]
[PDF 774 KB]
(186)
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18502 |
Yiming Liao(廖轶明), Xiaoli Ji(纪小丽), Yue Xu(徐跃), Chengxu Zhang(张城绪), Qiang Guo(郭强), Feng Yan(闫锋) |
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Random telegraph noise on the threshold voltage of multi-level flash memory |
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Chin. Phys. B
2017 Vol.26 (1): 18502-018502
[Abstract]
(878)
[HTML 1 KB]
[PDF 549 KB]
(476)
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